Magnetron Sputtering of Silicon Dioxide

Silicon dioxide (SiO2) is an important material for manufacturing of semiconductors and microelectromechanical systems (MEMS). It is mainly used for passivation or insulation films and as dielectric layer.

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One application example is the deposition of SiO2 as temperature compensation layer for TC-SAW filter devices in mobile communication. The performance of those filters strongly depends on the quality of the deposited SiO2 layer. Therefore, a cost-effective solution for high volume production with reliable process results and high wafer throughput is needed.

 

Advantages of magnetron sputtering for silicon dioxide deposition

• Dense films with high homogeneity and good purity
• Excellent coating precision
• Deposition with high rates
• Low substrate temperature allows processing of materials that are very fragile and sensitive to high temperatures and rapid temperature changes
• Variation of film properties by adjustable energetic substrate bombardment

 

 

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Silicon Dioxide (Fused Quartz) (SiO2) Sputtering Targets

Silicon Dioxide (Fused Quartz) (SiO2) Sputtering Targets Overview

Our comprehensive offering of sputtering targets, evaporation sources and other deposition materials is listed by material throughout the website. Below you will find budgetary pricing for sputtering targets and deposition materials per your requirements. Actual prices may vary due to market fluctuations. To speak to someone directly about current pricing or for a quote on sputtering targets and other deposition products not listed, please click here.

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Silicon Dioxide (Fused Quartz) (SiO2) General Information

Silicon dioxide, also known as silica, has a chemical formula of SiO2. It has a melting point of 1,610°C, a density of 2.648 g/cc, and a vapor pressure of 10-4 Torr at 1,025°C. Silicon dioxide is commonly found in nature as sand or quartz. It is primarily used in the production of glass for windows and beverage bottles. It is evaporated under vacuum for the fabrication of optoelectronic and circuit devices.

Silicon Dioxide (Fused Quartz) (SiO2) Specifications

Material TypeSilicon (IV) Oxide SymbolSiO2 Color/AppearanceWhite, Crystalline Solid Melting Point (°C)1,610 Theoretical Density (g/cc)~2.65 Z Ratio**1.00 SputterRF Max Power Density
(Watts/Square Inch)30* Type of BondIndium, Elastomer CommentsQuartz excellent in E-beam.

* This is a recommendation based on our experience running these materials in KJLC guns. The ratings are based on unbonded targets and are material specific. Bonded targets should be run at lower powers to prevent bonding failures. Bonded targets should be run at 20 Watts/Square Inch or lower, depending on the material.

* Suggested maximum power densities are based on using a sputter up orientation with optimal thermal transfer from target to the sputter cathode cooling well. Using other sputtering orientations or if there is a poor thermal interface between target to sputter cathode cooling well may require a reduction in suggested maximum power density and/or application of a thermal transfer paste. Please contact for specific power recommendations.

** The z-ratio is unknown. Therefore, we recommend using 1.00 or an experimentally determined value. Please click here for instructions on how to determine this value.

Z-Factors

Empirical Determination of Z-Factor

Unfortunately, Z Factor and Shear Modulus are not readily available for many materials. In this case, the Z-Factor can also be determined empirically using the following method:

• Deposit material until Crystal Life is near 50%, or near the end of life, whichever is sooner.
• Place a new substrate adjacent to the used quartz sensor.
• Set QCM Density to the calibrated value; Tooling to 100%
• Zero thickness
• Deposit approximately to A of material on the substrate.
• Use a profilometer or interferometer to measure the actual substrate film thickness.
• Adjust the Z Factor of the instrument until the correct thickness reading is shown.

Another alternative is to change crystals frequently and ignore the error. The graph below shows the % Error in Rate/Thickness from using the wrong Z Factor. For a crystal with 90% life, the error is negligible for even large errors in the programmed versus actual Z Factor.

Note:

• ramp up and ramp down procedures. This process may not be necessary with other materials. Targets that have a low thermal conductivity are susceptible to thermal shock. Please Ramp Procedure for Ceramic Target Break-in.

  This material may require specialandprocedures. This process may not be necessary with other materials. Targets that have a low thermal conductivity are susceptible to thermal shock. Please click here forfor

  Contact us to discuss your requirements of sputtering target materials. Our experienced sales team can help you identify the options that best suit your needs.